PolarHT TM Power
MOSFET HiPerFET TM
N-Channel Enhancement Mode
IXFV74N20P
IXFV74N20PS
IXFH74N20P
V DSS
I D25
R DS(on)
t rr
=
=
200V
74A
34 m Ω
200 ns
Avalanche Rated
Fast Intrinsic Diode
PLUS220 (IXFV)
S
Symbol
V DSS
V DGR
V GSS
V GSM
I D25
Test Conditions
T J = 25°C to 175°C
T J = 25°C to 175°C, R GS = 1M Ω
Continuous
Transient
T C = 25°C
Maximum Ratings
200
200
± 20
± 30
74
V
V
V
V
A
G
D
D (TAB)
PLUS220SMD (IXFV_S)
I DM
I A
E AS
T C = 25°C, pulse width limited by T JM
T C = 25°C
T C = 25°C
200
37
1
A
A
J
G
S
D (TAB)
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
T C = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
10
480
-55 ... +175
175
-55 ... +175
300
260
V/ns
W
°C
°C
°C
°C
°C
TO-247 (IXFH)
D (TAB)
M d
F C
Weight
Mounting torque (TO-247)
Mounting force (PLUS220)
PLUS220 & PLUS220SMD
TO-247
1.13/10
11..65/2.5..14.6
4
6
Nm/lb.in.
N/lb.
g
g
G = Gate
S = Source
Features
D = Drain
TAB = Drain
International standard packages
Fast recovery diode
Avalanche rated
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Low package inductance
- easy to drive and to protect
BV DSS
V GS = 0V, I D = 250 μ A
200
V
Advantages
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4mA
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 150 ° C
2.5
5.0
± 100
25
250
V
nA
μ A
μ A
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
34 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99209F(05/08)
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相关代理商/技术参数
IXFV96N15P 功能描述:MOSFET 96 Amps 150V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV96N15PS 功能描述:MOSFET 96 Amps 150V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV96N20P 功能描述:MOSFET 96 Amps 200V 0.024 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFX100N25 功能描述:MOSFET 100 Amps 250V 0.027 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFX120N20 功能描述:MOSFET 200V 120A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFX120N25 功能描述:MOSFET 120 Amps 250V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFX120N25P 功能描述:MOSFET 120 Amps 250 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFX120N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube